Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 105 A cm−2. This is enabled by a much weaker domain wall pinning compared to...

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Veröffentlicht in:Applied physics letters 2010-12, Vol.97 (26)
Hauptverfasser: Wang, K. Y., Edmonds, K. W., Irvine, A. C., Tatara, G., De Ranieri, E., Wunderlich, J., Olejnik, K., Rushforth, A. W., Campion, R. P., Williams, D. A., Foxon, C. T., Gallagher, B. L.
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Sprache:eng
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Zusammenfassung:Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 105 A cm−2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3532095