Minority carrier transport in p-ZnO nanowires

In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 μ m thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74 ± 5 meV . Electron beam irradiation also causes the diffusion length increase with the activation energy of 247 ± 10 meV , likely related to Sb Zn - 2 V Zn acceptor-complex.