Photoreflectance spectroscopy of semi-insulating GaAs

Clear observations of photoreflectance (PR) spectra due to excitonic transitions in semi-insulating GaAs bulk materials are reported. The modulation mechanism is attributed to the electromodulation induced by the Dember effect. This study indicates that the PR spectroscopy provides an important meth...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of applied physics 1992-10, Vol.72 (8), p.3826-3828
Hauptverfasser:	Wang, Ruozhen, Jiang, Desheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Infrared and raman spectra and scattering Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Physics
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Clear observations of photoreflectance (PR) spectra due to excitonic transitions in semi-insulating GaAs bulk materials are reported. The modulation mechanism is attributed to the electromodulation induced by the Dember effect. This study indicates that the PR spectroscopy provides an important method for characterizing the crystal quality of high-resistivity GaAs.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.352364