Regrowth rates and dopant activation of Sb+-implanted Si-Ge alloys
Epitaxial regrowth and dopant activation of Sb-implanted Si and Si0.93Ge0.07 were investigated with ion channeling techniques and transmission electron microscopy. The presence of Sb greatly enhanced the regrowth rate of both Si and Si0.93Ge0.07. The initial crystallinity of Si0.93Ge0.07 was fully r...
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| Veröffentlicht in: | Journal of applied physics 1992-10, Vol.72 (8), p.3821-3823 |
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| container_issue | 8 |
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| container_title | Journal of applied physics |
| container_volume | 72 |
| creator | HONG, S. Q HONG, Q. Z MAYER, J. W |
| description | Epitaxial regrowth and dopant activation of Sb-implanted Si and Si0.93Ge0.07 were investigated with ion channeling techniques and transmission electron microscopy. The presence of Sb greatly enhanced the regrowth rate of both Si and Si0.93Ge0.07. The initial crystallinity of Si0.93Ge0.07 was fully recovered after furnace annealing at 500–550 °C. Approximately 95% of Sb atoms were found on substitutional sites and most of them were electrically active. |
| doi_str_mv | 10.1063/1.352282 |
| format | Article |
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Q</creatorcontrib><creatorcontrib>HONG, Q. Z</creatorcontrib><creatorcontrib>MAYER, J. W</creatorcontrib><title>Regrowth rates and dopant activation of Sb+-implanted Si-Ge alloys</title><title>Journal of applied physics</title><description>Epitaxial regrowth and dopant activation of Sb-implanted Si and Si0.93Ge0.07 were investigated with ion channeling techniques and transmission electron microscopy. The presence of Sb greatly enhanced the regrowth rate of both Si and Si0.93Ge0.07. The initial crystallinity of Si0.93Ge0.07 was fully recovered after furnace annealing at 500–550 °C. 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W</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c256t-365f83090c37111b946c2cfb5a1bdef67f22f4b8a6c0aea35a94f3871d2e0b0f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Solid surfaces and solid-solid interfaces</topic><topic>Surface and interface dynamics and vibrations</topic><topic>Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)</topic><topic>Thin film structure and morphology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>HONG, S. Q</creatorcontrib><creatorcontrib>HONG, Q. Z</creatorcontrib><creatorcontrib>MAYER, J. 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The initial crystallinity of Si0.93Ge0.07 was fully recovered after furnace annealing at 500–550 °C. Approximately 95% of Sb atoms were found on substitutional sites and most of them were electrically active.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.352282</doi><tpages>3</tpages></addata></record> |
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| ispartof | Journal of applied physics, 1992-10, Vol.72 (8), p.3821-3823 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_352282 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Regrowth rates and dopant activation of Sb+-implanted Si-Ge alloys |
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