Regrowth rates and dopant activation of Sb+-implanted Si-Ge alloys

Epitaxial regrowth and dopant activation of Sb-implanted Si and Si0.93Ge0.07 were investigated with ion channeling techniques and transmission electron microscopy. The presence of Sb greatly enhanced the regrowth rate of both Si and Si0.93Ge0.07. The initial crystallinity of Si0.93Ge0.07 was fully r...

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Veröffentlicht in:	Journal of applied physics 1992-10, Vol.72 (8), p.3821-3823
Hauptverfasser:	HONG, S. Q, HONG, Q. Z, MAYER, J. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Epitaxial regrowth and dopant activation of Sb-implanted Si and Si0.93Ge0.07 were investigated with ion channeling techniques and transmission electron microscopy. The presence of Sb greatly enhanced the regrowth rate of both Si and Si0.93Ge0.07. The initial crystallinity of Si0.93Ge0.07 was fully recovered after furnace annealing at 500–550 °C. Approximately 95% of Sb atoms were found on substitutional sites and most of them were electrically active.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.352282