$Characterization of thin, doped silicon single crystals by x-ray diffraction$

Characterization of thin, doped silicon single crystals by x-ray diffraction

A free-standing, extremely thin silicon membrane, prepared by chemical vapor deposition of an epitaxial layer and subsequent anisotropic, selective etching, has been studied. The epitaxial layer consisted of a sandwich structure of undoped and highly boron/germanium-doped films, serving as an etch s...

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Veröffentlicht in:	Journal of applied physics 1992-07, Vol.72 (1), p.54-60
Hauptverfasser:	JOKSCH, S, GRAEFF, W, ZAUMSEIL, P, WINTER, U, CSEPREGI, L, IBERL, F, FREUND, A. K
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface and interface dynamics and vibrations Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
Online-Zugang:	Volltext
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Zusammenfassung:	A free-standing, extremely thin silicon membrane, prepared by chemical vapor deposition of an epitaxial layer and subsequent anisotropic, selective etching, has been studied. The epitaxial layer consisted of a sandwich structure of undoped and highly boron/germanium-doped films, serving as an etch stop. The results of double- and triple-crystal x-ray diffractometry in the Bragg and Laue case, i.e., in reflection and transmission, respectively, are reported using x radiation between 8.05 (Cu Kα1) and 17.5 keV (Mo Kα1) photon energy. The thickness of the crystal was determined to z0=(30±1) μm and its curvature to
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.352146