Silicon emitter for shortwave infrared ( 1.6 - 3   μ m ) band by light down-conversion

No silicon-based light emitting diodes exist for shortwave infrared ( 1.6 - 3.0 μ m ) band due to bandgap limitations imposed on luminescence wavelengths. To alleviate this problem, we propose a photonic device in which below-bandgap radiation comes as the result of the thermal emission enhanced by free charge carriers generated by the above-bandgap excitation (light downconversion). With this approach, we demonstrate high-temperature ( T > 300 K ) large-area ( 20 × 20 mm 2 ) Si emitter with stable high-power output ( ∼ 100 mW / cm 2 ) and prescribed spectrum inside the 1.6 - 3 μ m band for applications such as dynamic scene simulation devices operating at frequencies above 1 kHz.