YBa2Cu3O x /PrBa2Cu3O x /YBa2Cu3O x Josephson ramp junctions
A detailed study of the fabrication process, current voltage (I-V) characteristics, and Josephson and normal-state properties of the YBa2Cu3Ox(YBCO)/PrBa2Cu3Ox(PBCO)/YBCO ramp junctions is presented. The I-V characteristics can be well described by the resistively shunted junction model. It was foun...
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Veröffentlicht in: | Journal of applied physics 1992-07, Vol.72 (2), p.575-583 |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A detailed study of the fabrication process, current voltage (I-V) characteristics, and Josephson and normal-state properties of the YBa2Cu3Ox(YBCO)/PrBa2Cu3Ox(PBCO)/YBCO ramp junctions is presented. The I-V characteristics can be well described by the resistively shunted junction model. It was found that the critical current Ic and the normal-state conductance 1/Rn scale linearly with the junction area, whereas Ic, the excess current Iex, and IcRn products decrease with increasing barrier thickness. These junctions with cross-sectional area A have a good controllability, low capacitance, and high values of IcRn and RnA products. The coherence length ξn of the PBCO barrier is estimated to be between 5 and 8 nm. As unambiguous evidence of the Josephson behavior, the microwave response as a function of the microwave power as well as the modulations of critical current Ic(H) with applied magnetic field are shown. A modulation depth of more than 95% has been observed. Small proximity effect parameters and junction capacitance (C/A∼10−7 F/cm2) show an advantage of these junctions for many applications. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.351835 |