Quantum conductance fluctuations in self-aligned, pinch-narrowed silicon metal-oxide-semiconductor field-effect transistors

Quantum conductance fluctuations in self-aligned, pinch-narrowed silicon metal-oxide-semiconductor field-effect transistors

We have investigated the electrical behavior of pinch-narrowed n- and p-channel accumulation mode metal-oxide-semiconductor field-effect transistors. The devices were fabricated using a conventional twin well complementary metal-oxide-semiconductor process with gate widths smaller than 2 μm. The wel...

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Veröffentlicht in:Journal of applied physics 1992-08, Vol.72 (3), p.1183-1185
Hauptverfasser: SLIMMER, D. A, LICINI, J. C, VAN CAMPEN, S. D, KWASNICK, R. F
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Sprache:eng
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Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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container_end_page 1185
container_issue 3
container_start_page 1183
container_title Journal of applied physics
container_volume 72
creator SLIMMER, D. A
LICINI, J. C
VAN CAMPEN, S. D
KWASNICK, R. F
description We have investigated the electrical behavior of pinch-narrowed n- and p-channel accumulation mode metal-oxide-semiconductor field-effect transistors. The devices were fabricated using a conventional twin well complementary metal-oxide-semiconductor process with gate widths smaller than 2 μm. The well known signature of mesoscopic behavior, nonmonotonic variation in the channel conductance versus gate voltage, is observed below 8 K in the p-channel devices. The amplitude of the fluctuations is consistent with the predictions of quantum conductance fluctuations.
doi_str_mv 10.1063/1.351800
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subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Quantum conductance fluctuations in self-aligned, pinch-narrowed silicon metal-oxide-semiconductor field-effect transistors
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