Dislocations and precipitates in gallium arsenide

A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decisio...

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Veröffentlicht in:	Journal of applied physics 1992-01, Vol.71 (2), p.620-629
Hauptverfasser:	SCHLOSSMACHER, P, URBAN, K, RÜFER, H
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Physics Structure of solids and liquids crystallography
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