Dislocations and precipitates in gallium arsenide

A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decisio...

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Veröffentlicht in:Journal of applied physics 1992-01, Vol.71 (2), p.620-629
Hauptverfasser: SCHLOSSMACHER, P, URBAN, K, RÜFER, H
Format: Artikel
Sprache:eng
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Zusammenfassung:A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decision could be made on dislocation type, dislocation generation, and multiplication mechanisms. Taking into account possible dislocation reactions between stress-induced glide systems all detected glide systems could be explained. The influence of post-growth annealing on both dislocations and arsenic precipitates was also investigated. Little effect was found on dislocations. Arsenic precipitates, however, showed a different distribution in size and significant effects on fine structure giving information on their nucleation and growth mechanisms.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.351346