Dislocations and precipitates in gallium arsenide
A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decisio...
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Veröffentlicht in: | Journal of applied physics 1992-01, Vol.71 (2), p.620-629 |
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description | A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decision could be made on dislocation type, dislocation generation, and multiplication mechanisms. Taking into account possible dislocation reactions between stress-induced glide systems all detected glide systems could be explained. The influence of post-growth annealing on both dislocations and arsenic precipitates was also investigated. Little effect was found on dislocations. Arsenic precipitates, however, showed a different distribution in size and significant effects on fine structure giving information on their nucleation and growth mechanisms. |
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fullrecord | <record><control><sourceid>pascalfrancis_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_351346</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>5167306</sourcerecordid><originalsourceid>FETCH-LOGICAL-c320t-588e5293ba59b017f5c6a8c94a8c58470c45da4d130b31cf81522392face1ff93</originalsourceid><addsrcrecordid>eNo9j8FKxDAURYMoWEfBT-jChZuO7yV9bbKU0VFhwI2uy2uaSKTTlqQu_HsrFTf3bs69cIS4RtgiVOoOt4pQldWJyBC0KWoiOBUZgMRCm9qci4uUPgEQtTKZwIeQ-tHyHMYh5Tx0-RSdDVOYeXYpD0P-wX0fvo45x-SG0LlLcea5T-7qrzfiff_4tnsuDq9PL7v7Q2GVhLkgrR1Jo1om0wLWnmzF2ppyCdJlDbakjssOFbQKrddIUiojPVuH3hu1Ebfrr41jStH5ZorhyPG7QWh-VRtsVtUFvVnRiZPl3kcebEj_PGFVq2XwAxh2UZY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Dislocations and precipitates in gallium arsenide</title><source>AIP Digital Archive</source><creator>SCHLOSSMACHER, P ; URBAN, K ; RÜFER, H</creator><creatorcontrib>SCHLOSSMACHER, P ; URBAN, K ; RÜFER, H</creatorcontrib><description>A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decision could be made on dislocation type, dislocation generation, and multiplication mechanisms. Taking into account possible dislocation reactions between stress-induced glide systems all detected glide systems could be explained. The influence of post-growth annealing on both dislocations and arsenic precipitates was also investigated. Little effect was found on dislocations. Arsenic precipitates, however, showed a different distribution in size and significant effects on fine structure giving information on their nucleation and growth mechanisms.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.351346</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) ; Exact sciences and technology ; Physics ; Structure of solids and liquids; crystallography</subject><ispartof>Journal of applied physics, 1992-01, Vol.71 (2), p.620-629</ispartof><rights>1992 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c320t-588e5293ba59b017f5c6a8c94a8c58470c45da4d130b31cf81522392face1ff93</citedby><cites>FETCH-LOGICAL-c320t-588e5293ba59b017f5c6a8c94a8c58470c45da4d130b31cf81522392face1ff93</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=5167306$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>SCHLOSSMACHER, P</creatorcontrib><creatorcontrib>URBAN, K</creatorcontrib><creatorcontrib>RÜFER, H</creatorcontrib><title>Dislocations and precipitates in gallium arsenide</title><title>Journal of applied physics</title><description>A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decision could be made on dislocation type, dislocation generation, and multiplication mechanisms. Taking into account possible dislocation reactions between stress-induced glide systems all detected glide systems could be explained. The influence of post-growth annealing on both dislocations and arsenic precipitates was also investigated. Little effect was found on dislocations. Arsenic precipitates, however, showed a different distribution in size and significant effects on fine structure giving information on their nucleation and growth mechanisms.</description><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><subject>Structure of solids and liquids; crystallography</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1992</creationdate><recordtype>article</recordtype><recordid>eNo9j8FKxDAURYMoWEfBT-jChZuO7yV9bbKU0VFhwI2uy2uaSKTTlqQu_HsrFTf3bs69cIS4RtgiVOoOt4pQldWJyBC0KWoiOBUZgMRCm9qci4uUPgEQtTKZwIeQ-tHyHMYh5Tx0-RSdDVOYeXYpD0P-wX0fvo45x-SG0LlLcea5T-7qrzfiff_4tnsuDq9PL7v7Q2GVhLkgrR1Jo1om0wLWnmzF2ppyCdJlDbakjssOFbQKrddIUiojPVuH3hu1Ebfrr41jStH5ZorhyPG7QWh-VRtsVtUFvVnRiZPl3kcebEj_PGFVq2XwAxh2UZY</recordid><startdate>19920115</startdate><enddate>19920115</enddate><creator>SCHLOSSMACHER, P</creator><creator>URBAN, K</creator><creator>RÜFER, H</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19920115</creationdate><title>Dislocations and precipitates in gallium arsenide</title><author>SCHLOSSMACHER, P ; URBAN, K ; RÜFER, H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c320t-588e5293ba59b017f5c6a8c94a8c58470c45da4d130b31cf81522392face1ff93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1992</creationdate><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>SCHLOSSMACHER, P</creatorcontrib><creatorcontrib>URBAN, K</creatorcontrib><creatorcontrib>RÜFER, H</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>SCHLOSSMACHER, P</au><au>URBAN, K</au><au>RÜFER, H</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dislocations and precipitates in gallium arsenide</atitle><jtitle>Journal of applied physics</jtitle><date>1992-01-15</date><risdate>1992</risdate><volume>71</volume><issue>2</issue><spage>620</spage><epage>629</epage><pages>620-629</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A complete dislocation analysis on a large number of grown-in dislocations was performed on wafers taken from three different semi-insulating liquid encapsulation Czochralski GaAs single crystals. By determining the Burgers vector, line direction, and habit plane of nearly 800 dislocations a decision could be made on dislocation type, dislocation generation, and multiplication mechanisms. Taking into account possible dislocation reactions between stress-induced glide systems all detected glide systems could be explained. The influence of post-growth annealing on both dislocations and arsenic precipitates was also investigated. Little effect was found on dislocations. Arsenic precipitates, however, showed a different distribution in size and significant effects on fine structure giving information on their nucleation and growth mechanisms.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.351346</doi><tpages>10</tpages></addata></record> |
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subjects | Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.) Exact sciences and technology Physics Structure of solids and liquids crystallography |
title | Dislocations and precipitates in gallium arsenide |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T02%3A18%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Dislocations%20and%20precipitates%20in%20gallium%20arsenide&rft.jtitle=Journal%20of%20applied%20physics&rft.au=SCHLOSSMACHER,%20P&rft.date=1992-01-15&rft.volume=71&rft.issue=2&rft.spage=620&rft.epage=629&rft.pages=620-629&rft.issn=0021-8979&rft.eissn=1089-7550&rft.coden=JAPIAU&rft_id=info:doi/10.1063/1.351346&rft_dat=%3Cpascalfrancis_cross%3E5167306%3C/pascalfrancis_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |