Effect of radiation induced defects on the capacitance of silicon detectors

Effect of radiation induced defects on the capacitance of silicon detectors

The effect of neutron induced defects on Si detectors was studied both experimentally and theoretically. These defects form deep energy levels within the band gap. Four such levels were detected: 0.17, 0.24, 0.4, and 0.46 eV, using DLTS (deep level transient spectroscopy). The corresponding defects...

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Veröffentlicht in:Journal of applied physics 1992-02, Vol.71 (3), p.1517-1521
Hauptverfasser: DARVAS, R, MUDRIK, M, SEIDMAN, A, ZILBERSTEIN, M, CROITORU, N
Format: Artikel
Sprache:eng
Schlagworte:
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Other topics in instruments, apparatus, components and techniques common to several branches of physics and astronomy
Physics
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Zusammenfassung:The effect of neutron induced defects on Si detectors was studied both experimentally and theoretically. These defects form deep energy levels within the band gap. Four such levels were detected: 0.17, 0.24, 0.4, and 0.46 eV, using DLTS (deep level transient spectroscopy). The corresponding defects were identified and characterized. The capacitance was measured at different frequencies and temperature. It was shown that the capacitance of the irradiated detectors strongly depends upon temperature. A relation for this dependence (C-T) was found. Comparisons of DLTS with C-T results showed good agreement.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.351221