The effect of La in InZnO systems for solution-processed amorphous oxide thin-film transistors

Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La 3 + additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La 3 + could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm 2 / V s , 7.86 V, 0.6 V/dec, and ∼ 10 6 , respectively.