Second harmonic generation probing of dopant type and density at the Si/SiO2 interface

Second harmonic generation probing of dopant type and density at the Si/SiO2 interface

Time-dependent second-harmonic generation (TD-SHG) is shown to be a sensitive, noncontact probe of dopant type and concentration at Si/SiO2 interfaces. TD-SHG signal magnitude increases for n-Si(111)/SiO2, while for p-Si(111)/SiO2 TD-SHG is nonmonotonic. This behavior is interpreted as a consequence...

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Veröffentlicht in:Applied physics letters 2011-01, Vol.98 (4)
Hauptverfasser: Fiore, Julie L., Fomenko, Vasiliy V., Bodlaki, Dora, Borguet, Eric
Format: Artikel
Sprache:eng
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Zusammenfassung:Time-dependent second-harmonic generation (TD-SHG) is shown to be a sensitive, noncontact probe of dopant type and concentration at Si/SiO2 interfaces. TD-SHG signal magnitude increases for n-Si(111)/SiO2, while for p-Si(111)/SiO2 TD-SHG is nonmonotonic. This behavior is interpreted as a consequence of SHG sensitivity to electric fields induced by interfacial charge transfer and trapping.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3505356