Electrical characterization of PMN–28%PT(001) crystals used as thin-film substrates

Ferroelectric and piezoelectric properties of (001) 0.72PbMg1/3Nb2/3O3–0.28PbTiO3 (PMN–28%PT) single crystals have been investigated from cryogenic temperatures to 475 K. PMN–28%PT is used as piezoelectric substrate, e.g., in multiferroic heterostructures. Electric field-induced phase transformation...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2010-11, Vol.108 (9)
Hauptverfasser: Herklotz, Andreas, Plumhof, Johannes D., Rastelli, Armando, Schmidt, Oliver G., Schultz, Ludwig, Dörr, Kathrin
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Ferroelectric and piezoelectric properties of (001) 0.72PbMg1/3Nb2/3O3–0.28PbTiO3 (PMN–28%PT) single crystals have been investigated from cryogenic temperatures to 475 K. PMN–28%PT is used as piezoelectric substrate, e.g., in multiferroic heterostructures. Electric field-induced phase transformations have been examined by electrical characterization including measurements of polarization loops, dielectric permitivitty, and the resistance change in La0.7Sr0.3MnO3 films deposited on the (001) face. The relaxor ferroelectric transition behavior was studied by means of time-dependent current measurements. A phase diagram is set up. PMN–28%PT is found to be at the border of the appearance of the monoclinc phase (MC) bridging the rhombohedral-tetragonal (R-T) transformation at higher PbTiO3 contents. Measurements of the lattice expansion reveal that a high piezoelectric effect persists down to low temperatures. Therefore, PMN–28%PT single crystals are found to be appropriate substrates for application of piezoelectric strain to thin films over a broad temperature range.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3503209