Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed by in situ photoluminescence

We use in situ photoluminescence (PL) to investigate recombination at (100)GaAs surfaces and GaAs/AlGaAs interfaces in a controlled crystal growth environment. PL was monitored for different GaAs surface reconstructions, after surface chemical modification, and during early stages of AlGaAs heteroep...

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Veröffentlicht in:	Journal of applied physics 1991-10, Vol.70 (7), p.3632-3635
Hauptverfasser:	SANDROFF, C. J, TURCO-SANDROFF, F. S, FLOREZ, L. T, HARBISON, J. P
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Physics
Online-Zugang:	Volltext
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