Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed by in situ photoluminescence
We use in situ photoluminescence (PL) to investigate recombination at (100)GaAs surfaces and GaAs/AlGaAs interfaces in a controlled crystal growth environment. PL was monitored for different GaAs surface reconstructions, after surface chemical modification, and during early stages of AlGaAs heteroep...
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Veröffentlicht in: | Journal of applied physics 1991-10, Vol.70 (7), p.3632-3635 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We use in situ photoluminescence (PL) to investigate recombination at (100)GaAs surfaces and GaAs/AlGaAs interfaces in a controlled crystal growth environment. PL was monitored for different GaAs surface reconstructions, after surface chemical modification, and during early stages of AlGaAs heteroepitaxy. Depositing ∼1 ML of Se to form a (2×1) surface increased the GaAs PL intensity 200 times. Surprisingly, it required 6 ML (15 Å) of heteroepitaxial AlGaAs to achieve the same degree of surface passivation. We invoke lateral variations in interfacial AlGaAs composition to explain these results. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/1.349210 |