Spectroscopic investigation of hydrogen-dopant complexes in bulk p-type and implanted n-type crystalline silicon

Infrared absorption experiments have been performed on hydrogenated and deuterated bulk boron- and aluminum-doped-Si and implanted P, As, and Sb donors in silicon. A first evidence of complex formation in bulk p-type Si is obtained and the spectra confirm the anomalous 3.3-cm−1 deuterium frequency shift with respect to boron isotopes. The ratio of the D-11B and D-10B peak areas is found to be the same as that of the two boron isotopes natural abundance. In donor-implanted silicon, a quantitative analysis of the obtained data has allowed a rough estimate of the passivating rate due to diffusing deuterium. While the frequencies of the various vibrational lines are found to be in agreement with those reported in the literature, the data on the broad line at 1660 cm−1 (H) or 1220 cm−1 (D) seem to suggest an assignment of this peak to a complex in the bulk involving some type of defect due to the implantation process.