Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition
Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al 0.83 In 0.17 N alloy exhibited thermal conductivity of 4.87 W/(mK) measured by 3 ω differential method. The Seebeck coefficient of n-Al 0.83 In 0.17 N was mea...
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| Veröffentlicht in: | Applied physics letters 2010-09, Vol.97 (11), p.112105-112105-3 |
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| container_title | Applied physics letters |
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| creator | Tong, Hua Zhang, Jing Liu, Guangyu Herbsommer, Juan A. Huang, G. S. Tansu, Nelson |
| description | Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type
Al
0.83
In
0.17
N
alloy exhibited thermal conductivity of 4.87 W/(mK) measured by
3
ω
differential method. The Seebeck coefficient of
n-Al
0.83
In
0.17
N
was measured as
−
6.012
×
10
−
4
V
/
K
by thermal gradient method. The sheet resistivity of
n-Al
0.83
In
0.17
N
was measured by using Van der Pauw method, and the electrical conductivity was measured as
2.38
×
10
4
/
(
Ω
m
)
. The thermoelectric figure of merit
(
Z
∗
T
)
of n-type
Al
0.83
In
0.17
N
was measured as 0.532 at room temperature
(
T
=
300
K
)
. The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application. |
| doi_str_mv | 10.1063/1.3489086 |
| format | Article |
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Al
0.83
In
0.17
N
alloy exhibited thermal conductivity of 4.87 W/(mK) measured by
3
ω
differential method. The Seebeck coefficient of
n-Al
0.83
In
0.17
N
was measured as
−
6.012
×
10
−
4
V
/
K
by thermal gradient method. The sheet resistivity of
n-Al
0.83
In
0.17
N
was measured by using Van der Pauw method, and the electrical conductivity was measured as
2.38
×
10
4
/
(
Ω
m
)
. The thermoelectric figure of merit
(
Z
∗
T
)
of n-type
Al
0.83
In
0.17
N
was measured as 0.532 at room temperature
(
T
=
300
K
)
. The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3489086</identifier><identifier>CODEN: APPLAB</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Applied physics letters, 2010-09, Vol.97 (11), p.112105-112105-3</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c350t-9443e7484ae79c2ea44ea5a627375d9aa096cdfa8520ef169b28cced90b39b013</citedby><cites>FETCH-LOGICAL-c350t-9443e7484ae79c2ea44ea5a627375d9aa096cdfa8520ef169b28cced90b39b013</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/apl/article-lookup/doi/10.1063/1.3489086$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,776,780,790,1553,4498,27901,27902,76126,76132</link.rule.ids></links><search><creatorcontrib>Tong, Hua</creatorcontrib><creatorcontrib>Zhang, Jing</creatorcontrib><creatorcontrib>Liu, Guangyu</creatorcontrib><creatorcontrib>Herbsommer, Juan A.</creatorcontrib><creatorcontrib>Huang, G. S.</creatorcontrib><creatorcontrib>Tansu, Nelson</creatorcontrib><title>Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition</title><title>Applied physics letters</title><description>Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type
Al
0.83
In
0.17
N
alloy exhibited thermal conductivity of 4.87 W/(mK) measured by
3
ω
differential method. The Seebeck coefficient of
n-Al
0.83
In
0.17
N
was measured as
−
6.012
×
10
−
4
V
/
K
by thermal gradient method. The sheet resistivity of
n-Al
0.83
In
0.17
N
was measured by using Van der Pauw method, and the electrical conductivity was measured as
2.38
×
10
4
/
(
Ω
m
)
. The thermoelectric figure of merit
(
Z
∗
T
)
of n-type
Al
0.83
In
0.17
N
was measured as 0.532 at room temperature
(
T
=
300
K
)
. The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAURS0EEqUw8A-8MqTYsfPhBamqoFSqYClz9OK8tEZOHNkWKP-elHZhYHq6T0dXV4eQe84WnOXikS-ELBUr8wsy46woEsF5eUlmjDGR5Crj1-QmhM8pZqkQM2J2B_SdQ4s6eqPp4N2APhoM1LXUQoxGY9JB1Ads6NJu-jcK1rqR7r377mk90g4jWOr8HvqpYOI6o6fHFwzO0wYHF0w0rr8lVy3YgHfnOycfL8-71WuyfV9vVsttokXGYqKkFFjIUgIWSqcIUiJkkKeFKLJGATCV66aFMksZtjxXdVpqjY1itVA142JOHk692rsQPLbV4E0Hfqw4q46OKl6dHU3s04kN2kQ4rvwf_iuq-hUlfgDRiHDE</recordid><startdate>20100913</startdate><enddate>20100913</enddate><creator>Tong, Hua</creator><creator>Zhang, Jing</creator><creator>Liu, Guangyu</creator><creator>Herbsommer, Juan A.</creator><creator>Huang, G. S.</creator><creator>Tansu, Nelson</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100913</creationdate><title>Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition</title><author>Tong, Hua ; Zhang, Jing ; Liu, Guangyu ; Herbsommer, Juan A. ; Huang, G. S. ; Tansu, Nelson</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c350t-9443e7484ae79c2ea44ea5a627375d9aa096cdfa8520ef169b28cced90b39b013</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tong, Hua</creatorcontrib><creatorcontrib>Zhang, Jing</creatorcontrib><creatorcontrib>Liu, Guangyu</creatorcontrib><creatorcontrib>Herbsommer, Juan A.</creatorcontrib><creatorcontrib>Huang, G. S.</creatorcontrib><creatorcontrib>Tansu, Nelson</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tong, Hua</au><au>Zhang, Jing</au><au>Liu, Guangyu</au><au>Herbsommer, Juan A.</au><au>Huang, G. S.</au><au>Tansu, Nelson</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition</atitle><jtitle>Applied physics letters</jtitle><date>2010-09-13</date><risdate>2010</risdate><volume>97</volume><issue>11</issue><spage>112105</spage><epage>112105-3</epage><pages>112105-112105-3</pages><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type
Al
0.83
In
0.17
N
alloy exhibited thermal conductivity of 4.87 W/(mK) measured by
3
ω
differential method. The Seebeck coefficient of
n-Al
0.83
In
0.17
N
was measured as
−
6.012
×
10
−
4
V
/
K
by thermal gradient method. The sheet resistivity of
n-Al
0.83
In
0.17
N
was measured by using Van der Pauw method, and the electrical conductivity was measured as
2.38
×
10
4
/
(
Ω
m
)
. The thermoelectric figure of merit
(
Z
∗
T
)
of n-type
Al
0.83
In
0.17
N
was measured as 0.532 at room temperature
(
T
=
300
K
)
. The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3489086</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0003-6951 |
| ispartof | Applied physics letters, 2010-09, Vol.97 (11), p.112105-112105-3 |
| issn | 0003-6951 1077-3118 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3489086 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition |
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