Thermoelectric properties of lattice-matched AlInN alloy grown by metal organic chemical vapor deposition

Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al 0.83 In 0.17 N alloy exhibited thermal conductivity of 4.87 W/(mK) measured by 3 ω differential method. The Seebeck coefficient of n-Al 0.83 In 0.17 N was mea...

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Veröffentlicht in:Applied physics letters 2010-09, Vol.97 (11), p.112105-112105-3
Hauptverfasser: Tong, Hua, Zhang, Jing, Liu, Guangyu, Herbsommer, Juan A., Huang, G. S., Tansu, Nelson
Format: Artikel
Sprache:eng
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Zusammenfassung:Thermoelectric properties of lattice-matched AlInN grown by metal organic chemical vapor deposition were measured and analyzed. The n-type Al 0.83 In 0.17 N alloy exhibited thermal conductivity of 4.87 W/(mK) measured by 3 ω differential method. The Seebeck coefficient of n-Al 0.83 In 0.17 N was measured as − 6.012 × 10 − 4   V / K by thermal gradient method. The sheet resistivity of n-Al 0.83 In 0.17 N was measured by using Van der Pauw method, and the electrical conductivity was measured as 2.38 × 10 4 / ( Ω m ) . The thermoelectric figure of merit ( Z ∗ T ) of n-type Al 0.83 In 0.17 N was measured as 0.532 at room temperature ( T = 300   K ) . The finding indicates lattice-matched AlInN alloy on GaN as excellent material candidate for thermoelectric application.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3489086