Improved n-type bottom-contact organic transistors by introducing a poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) coating on the source/drain electrodes

We improved the device performance of N,N′-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) n-type field-effect transistors, increasing electron-mobility from 0.003 to 0.101 cm2/V s, by applying a coating of poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) to gold source/drain (S/D) electrodes, thereby reducing contact resistance in the devices. Crystallinity and electronic structure studies suggested that the improved device performance resulted from higher crystallinity of PTCDI-C13 on the PEDOT:PSS-coated S/D electrodes at the interface between the electrode and the channel.