Characterization of a remote hydrogen plasma reactor with electron spin resonance

Gas phase chemical reactions, of importance in the deposition of amorphous semiconductors, were studied in a remote hydrogen plasma reactor with electron spin resonance (ESR). The following reactant pairs (and their observed room-temperature rate coefficients) were characterized: (1) H+SiH4(2.4×1011 cm3 mole−1s−1), (2) D+SiH4 (2.1×1011 cm3 mole−1 s−1), and (3) H+C2H2 (1.2×1010 cm3 mole−1 s−1). The interpretation of these coefficients in terms of primary and secondary gas phase reactions is discussed, and the values are compared where possible with previously published data. In addition, the paramagnetic centers of the silicon-based film that is deposited in situ during the ESR measurement can now be microscopically identified in light of recent studies.