Be, S, Si, and Ne ion implantation in InSb grown on GaAs

Single- and multiple-energy Be, S, Si, and Ne ion implantations were performed at room temperature in InSb grown on semi-insulating GaAs substrates. The implanted material was subjected to both isochronal and isothermal annealing schemes. The as-implanted and annealed material was characterized by Hall, secondary ion mass spectrometry, and x-ray rocking curve measurements. The as-implanted material is highly n-type for all implant species used in this study. A maximum p-type activation of 90% and n-type activation of 16% was achieved for Be and S implants, respectively. Be activation depends on the thickness of the InSb layer. No in-diffusion of Be and S was observed even after 500 °C anneal. The Si implant has an amphoteric doping behavior.