Enhanced exciton photoluminescence in the selectively Si-doped GaAs/AlxGa1−xAs heterostructures

Experimental results examining the photoluminescence spectra of selectively Si-doped GaAs/AlxGa1−xAs heterostructures is presented. Possible mechanisms of carrier recombination are discussed with a special emphasis on the peculiarities of excitonic photoluminescence. Strong intensity lines in photol...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Journal of applied physics 2010-09, Vol.108 (6)
Hauptverfasser: Kundrotas, J., Čerškus, A., Nargelienė, V., Sužiedėlis, A., Ašmontas, S., Gradauskas, J., Johannessen, A., Johannessen, E., Umansky, V.
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Experimental results examining the photoluminescence spectra of selectively Si-doped GaAs/AlxGa1−xAs heterostructures is presented. Possible mechanisms of carrier recombination are discussed with a special emphasis on the peculiarities of excitonic photoluminescence. Strong intensity lines in photoluminescence spectra are associated with the formation and enhancement of free exciton and exciton-polariton emission in the flat band region of an active i-GaAs layer. The excitonic PL intensity is sensitive to the excitation intensity indicating high nonlinear behavior of spectral-integrated photoluminescence intensity and exciton line narrowing. These observed phenomena may be related to the collective interaction of excitons and the interaction of excitons with emitted electromagnetic waves. The gain of the amplification of the excitonic photoluminescence intensity in the heterostructure was found to be more than 1000 times larger than the intensity of i-GaAs active layer. The quality factor of the exciton line emission and the exciton-polariton line was found to be 3800 and 7600, respectively.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.3483240