Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Applied physics letters 2010-08, Vol.97 (5)
Hauptverfasser:	Hwang, Inrok, Lee, Myung-Jae, Buh, Gyoung-Ho, Bae, Jieun, Choi, Jinsik, Kim, Jin-Soo, Hong, Sahwan, Kim, Yeon Soo, Byun, Ik-Su, Lee, Seung-Woong, Ahn, Seung-Eon, Kang, Bo Soo, Kang, Sung-Oong, Park, Bae Ho
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!