Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure
We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4...
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Veröffentlicht in: | Applied physics letters 2010-08, Vol.97 (5) |
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Hauptverfasser: | , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2−) is responsible for the switching transition in Pt/NiO/Pt structures. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3477953 |