Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure

We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4...

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Veröffentlicht in:Applied physics letters 2010-08, Vol.97 (5)
Hauptverfasser: Hwang, Inrok, Lee, Myung-Jae, Buh, Gyoung-Ho, Bae, Jieun, Choi, Jinsik, Kim, Jin-Soo, Hong, Sahwan, Kim, Yeon Soo, Byun, Ik-Su, Lee, Seung-Woong, Ahn, Seung-Eon, Kang, Bo Soo, Kang, Sung-Oong, Park, Bae Ho
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Sprache:eng
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Zusammenfassung:We have observed a switching transition between bistable memory switching and monostable threshold switching in Pt/NiO/Pt structure. Bistable memory switching could be changed to monostable threshold switching by applying a positive electrical pulse with height of 2 V and width between 10−2 and 10−4 s. The change is reversible by applying a negative electrical pulse with the same height and width. By considering polarity- and width-dependence of the switching transition and compositional difference on electrical properties in NiOx, we have proposed a model in which the migration of oxygen ions (O2−) is responsible for the switching transition in Pt/NiO/Pt structures.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3477953