GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si

GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si

Considerable modulation ratios are achieved for GaAs multiple-quantum-well reflector modulators grown on Si by inserting an AlAs/AlGaAs dielectric mirror into the device structure. Modulation ratios of up to 4:1 is attained as the external bias voltage is increased to 9 V and the 1C-1HH exciton abso...

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Veröffentlicht in:Journal of applied physics 1991, Vol.69 (1), p.534-536
Hauptverfasser: SALVADOR, A, ADOMI, K, KISHINO, K, ÜNLÜ, M. S, MORKOC, H
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Sprache:eng
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Applied sciences
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
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container_end_page 536
container_issue 1
container_start_page 534
container_title Journal of applied physics
container_volume 69
creator SALVADOR, A
ADOMI, K
KISHINO, K
ÜNLÜ, M. S
MORKOC, H
description Considerable modulation ratios are achieved for GaAs multiple-quantum-well reflector modulators grown on Si by inserting an AlAs/AlGaAs dielectric mirror into the device structure. Modulation ratios of up to 4:1 is attained as the external bias voltage is increased to 9 V and the 1C-1HH exciton absorption peak undergoes quantum-confirmed Stark shift. Measurements also indicate that cavity effects arising from the front surface reflection and that of the imbedded dielectric mirror strongly modify the reflectivity spectra.
doi_str_mv 10.1063/1.347702
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subjects Applied sciences
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
title GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si
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