GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si

GaAs multiple-quantum-well reflector modulators with 4:1 contrast ratios on Si

Considerable modulation ratios are achieved for GaAs multiple-quantum-well reflector modulators grown on Si by inserting an AlAs/AlGaAs dielectric mirror into the device structure. Modulation ratios of up to 4:1 is attained as the external bias voltage is increased to 9 V and the 1C-1HH exciton abso...

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Veröffentlicht in:Journal of applied physics 1991, Vol.69 (1), p.534-536
Hauptverfasser: SALVADOR, A, ADOMI, K, KISHINO, K, ÜNLÜ, M. S, MORKOC, H
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
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Zusammenfassung:Considerable modulation ratios are achieved for GaAs multiple-quantum-well reflector modulators grown on Si by inserting an AlAs/AlGaAs dielectric mirror into the device structure. Modulation ratios of up to 4:1 is attained as the external bias voltage is increased to 9 V and the 1C-1HH exciton absorption peak undergoes quantum-confirmed Stark shift. Measurements also indicate that cavity effects arising from the front surface reflection and that of the imbedded dielectric mirror strongly modify the reflectivity spectra.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.347702