An analysis of the two electron satellite spectrum of GaAs in high magnetic fields

We report the observation of 2p0,−1, 2s0, 3d−1,−2, 3p−1, and 4f−3 structures in the ‘‘two electron’’ satellite photoluminescence of excitons bound to the (hydrogenic) shallow donors Ge and Se/Sn in high purity metalorganic vapor-phase epitaxy grown GaAs. The attribution is based upon selective excitation of the different principal donor bound exciton (D0,X) lines at magnetic fields of 7 T at T=1.5 K, combined with a careful analysis of the behavior of the hydrogen atom in a magnetic field. The results are interpreted in terms of high magnetic field quantum numbers and in terms of shapes of hydrogen wavefunctions in strong magnetic fields. One of the samples used in this work is so pure that for the first time donors have been identified from the relatively broad n=2 two electron satellite involving the (D0,X) ground state at zero field.