Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell
The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined th...
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Veröffentlicht in: | Applied physics letters 2010-07, Vol.97 (1) |
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creator | Nolasco, J. C. Sánchez-Díaz, Antonio Cabré, R. Ferré-Borrull, J. Marsal, L. F. Palomares, E. Pallarès, J. |
description | The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential. |
doi_str_mv | 10.1063/1.3456393 |
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C. ; Sánchez-Díaz, Antonio ; Cabré, R. ; Ferré-Borrull, J. ; Marsal, L. F. ; Palomares, E. ; Pallarès, J.</creator><creatorcontrib>Nolasco, J. C. ; Sánchez-Díaz, Antonio ; Cabré, R. ; Ferré-Borrull, J. ; Marsal, L. F. ; Palomares, E. ; Pallarès, J.</creatorcontrib><description>The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3456393</identifier><language>eng</language><ispartof>Applied physics letters, 2010-07, Vol.97 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-99e6f43f09eb3c1e918c74d56605fc8ff0adf516d07998f89ac3e59cd5b000043</citedby><cites>FETCH-LOGICAL-c229t-99e6f43f09eb3c1e918c74d56605fc8ff0adf516d07998f89ac3e59cd5b000043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Nolasco, J. 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Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.</abstract><doi>10.1063/1.3456393</doi></addata></record> |
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title | Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell |
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