Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell

The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined th...

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Veröffentlicht in:Applied physics letters 2010-07, Vol.97 (1)
Hauptverfasser: Nolasco, J. C., Sánchez-Díaz, Antonio, Cabré, R., Ferré-Borrull, J., Marsal, L. F., Palomares, E., Pallarès, J.
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container_issue 1
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container_title Applied physics letters
container_volume 97
creator Nolasco, J. C.
Sánchez-Díaz, Antonio
Cabré, R.
Ferré-Borrull, J.
Marsal, L. F.
Palomares, E.
Pallarès, J.
description The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.
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fullrecord <record><control><sourceid>crossref</sourceid><recordid>TN_cdi_crossref_primary_10_1063_1_3456393</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1063_1_3456393</sourcerecordid><originalsourceid>FETCH-LOGICAL-c229t-99e6f43f09eb3c1e918c74d56605fc8ff0adf516d07998f89ac3e59cd5b000043</originalsourceid><addsrcrecordid>eNotUMFKxDAUDKJgXT34B7l66O5LX5M2RynqCguC6FFKmr5gJKZLGhH_3i67p5lhhoEZxm4FrAUo3Ig11lKhxjNWCGiaEoVoz1kBAFgqLcUlu5rnr0XKCrFgH68UTPZT5APlX6LI8yfxwaTkKXEfMyVnLHETx6Pz40MufeT7KVPM3gR-EAtdUpE2nQI-T8EkbimEa3bhTJjp5oQr9v748NZty93L03N3vyttVelcak3K1ehA04BWkBatbepRKgXS2dY5MKOTQo3QaN26VhuLJLUd5bAMgRpX7O7Ya9M0z4lcv0_-26S_XkB_-KUX_ekX_AdhCFUg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell</title><source>AIP Journals Complete</source><source>AIP Digital Archive</source><source>Alma/SFX Local Collection</source><creator>Nolasco, J. C. ; Sánchez-Díaz, Antonio ; Cabré, R. ; Ferré-Borrull, J. ; Marsal, L. F. ; Palomares, E. ; Pallarès, J.</creator><creatorcontrib>Nolasco, J. C. ; Sánchez-Díaz, Antonio ; Cabré, R. ; Ferré-Borrull, J. ; Marsal, L. F. ; Palomares, E. ; Pallarès, J.</creatorcontrib><description>The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3456393</identifier><language>eng</language><ispartof>Applied physics letters, 2010-07, Vol.97 (1)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c229t-99e6f43f09eb3c1e918c74d56605fc8ff0adf516d07998f89ac3e59cd5b000043</citedby><cites>FETCH-LOGICAL-c229t-99e6f43f09eb3c1e918c74d56605fc8ff0adf516d07998f89ac3e59cd5b000043</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Nolasco, J. C.</creatorcontrib><creatorcontrib>Sánchez-Díaz, Antonio</creatorcontrib><creatorcontrib>Cabré, R.</creatorcontrib><creatorcontrib>Ferré-Borrull, J.</creatorcontrib><creatorcontrib>Marsal, L. F.</creatorcontrib><creatorcontrib>Palomares, E.</creatorcontrib><creatorcontrib>Pallarès, J.</creatorcontrib><title>Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell</title><title>Applied physics letters</title><description>The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.</description><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNotUMFKxDAUDKJgXT34B7l66O5LX5M2RynqCguC6FFKmr5gJKZLGhH_3i67p5lhhoEZxm4FrAUo3Ig11lKhxjNWCGiaEoVoz1kBAFgqLcUlu5rnr0XKCrFgH68UTPZT5APlX6LI8yfxwaTkKXEfMyVnLHETx6Pz40MufeT7KVPM3gR-EAtdUpE2nQI-T8EkbimEa3bhTJjp5oQr9v748NZty93L03N3vyttVelcak3K1ehA04BWkBatbepRKgXS2dY5MKOTQo3QaN26VhuLJLUd5bAMgRpX7O7Ya9M0z4lcv0_-26S_XkB_-KUX_ekX_AdhCFUg</recordid><startdate>20100705</startdate><enddate>20100705</enddate><creator>Nolasco, J. C.</creator><creator>Sánchez-Díaz, Antonio</creator><creator>Cabré, R.</creator><creator>Ferré-Borrull, J.</creator><creator>Marsal, L. F.</creator><creator>Palomares, E.</creator><creator>Pallarès, J.</creator><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100705</creationdate><title>Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell</title><author>Nolasco, J. C. ; Sánchez-Díaz, Antonio ; Cabré, R. ; Ferré-Borrull, J. ; Marsal, L. F. ; Palomares, E. ; Pallarès, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c229t-99e6f43f09eb3c1e918c74d56605fc8ff0adf516d07998f89ac3e59cd5b000043</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nolasco, J. C.</creatorcontrib><creatorcontrib>Sánchez-Díaz, Antonio</creatorcontrib><creatorcontrib>Cabré, R.</creatorcontrib><creatorcontrib>Ferré-Borrull, J.</creatorcontrib><creatorcontrib>Marsal, L. F.</creatorcontrib><creatorcontrib>Palomares, E.</creatorcontrib><creatorcontrib>Pallarès, J.</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nolasco, J. C.</au><au>Sánchez-Díaz, Antonio</au><au>Cabré, R.</au><au>Ferré-Borrull, J.</au><au>Marsal, L. F.</au><au>Palomares, E.</au><au>Pallarès, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell</atitle><jtitle>Applied physics letters</jtitle><date>2010-07-05</date><risdate>2010</risdate><volume>97</volume><issue>1</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.</abstract><doi>10.1063/1.3456393</doi></addata></record>
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title Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T15%3A12%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Relation%20between%20the%20barrier%20interface%20and%20the%20built-in%20potential%20in%20pentacene/C60%20solar%20cell&rft.jtitle=Applied%20physics%20letters&rft.au=Nolasco,%20J.%20C.&rft.date=2010-07-05&rft.volume=97&rft.issue=1&rft.issn=0003-6951&rft.eissn=1077-3118&rft_id=info:doi/10.1063/1.3456393&rft_dat=%3Ccrossref%3E10_1063_1_3456393%3C/crossref%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true