Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell

The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined th...

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Veröffentlicht in:Applied physics letters 2010-07, Vol.97 (1)
Hauptverfasser: Nolasco, J. C., Sánchez-Díaz, Antonio, Cabré, R., Ferré-Borrull, J., Marsal, L. F., Palomares, E., Pallarès, J.
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Sprache:eng
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Zusammenfassung:The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3456393