Relation between the barrier interface and the built-in potential in pentacene/C60 solar cell
The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined th...
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Veröffentlicht in: | Applied physics letters 2010-07, Vol.97 (1) |
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Hauptverfasser: | , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The mechanisms limiting the dark current in pentacene (Pc)/C60 solar cell were determined using the temperature dependence of the current-density-voltage characteristics. Our analysis allowed us to calculate the effective barrier height for electrons and holes at the interface. We then determined the built-in potential of the heterojunction and the effective doping concentration of the active layers, using capacitance-voltage characteristics. These physical parameters were used to simulate a band-energy diagram for a Pc/C60 solar cell in equilibrium. Finally, we determined a relation between the effective barrier height and the built-in potential. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.3456393 |