A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions
A measurement method has been developed which makes it possible to determine the thermal emission rates, the concentrations, and position of the thermal emission region for charge-carrier emission centers in nonabrupt p-n junctions. A computerized deep-level transient spectroscopy (DLTS) technique f...
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Veröffentlicht in: | Journal of applied physics 1990-04, Vol.67 (7), p.3500-3510 |
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creator | ANDERSSON, G. I ENGSTRÖM, O |
description | A measurement method has been developed which makes it possible to determine the thermal emission rates, the concentrations, and position of the thermal emission region for charge-carrier emission centers in nonabrupt p-n junctions. A computerized deep-level transient spectroscopy (DLTS) technique for current transients is used in combination with capacitance measurements. Numerical, iterative calculations of the shallow doping profile of the p-n junction and capacitance change connected with thermal emission of charge carriers from the emission centers are compared with measured data. Generalized expressions for the determination of carrier emission data from thermal current and capacitance transients are derived for nonabrupt p-n junctions. The method is applicable when the properties of the p-n junction cannot be chosen arbitrarily, for example, for the study of deep impurity centers in standard types of semiconductor devices where conventional DLTS methods fail. |
doi_str_mv | 10.1063/1.345341 |
format | Article |
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I ; ENGSTRÖM, O</creator><creatorcontrib>ANDERSSON, G. I ; ENGSTRÖM, O</creatorcontrib><description>A measurement method has been developed which makes it possible to determine the thermal emission rates, the concentrations, and position of the thermal emission region for charge-carrier emission centers in nonabrupt p-n junctions. A computerized deep-level transient spectroscopy (DLTS) technique for current transients is used in combination with capacitance measurements. Numerical, iterative calculations of the shallow doping profile of the p-n junction and capacitance change connected with thermal emission of charge carriers from the emission centers are compared with measured data. Generalized expressions for the determination of carrier emission data from thermal current and capacitance transients are derived for nonabrupt p-n junctions. The method is applicable when the properties of the p-n junction cannot be chosen arbitrarily, for example, for the study of deep impurity centers in standard types of semiconductor devices where conventional DLTS methods fail.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.345341</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>Woodbury, NY: American Institute of Physics</publisher><subject>Charge carriers: generation, recombination, lifetime, and trapping ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Exact sciences and technology ; Physics</subject><ispartof>Journal of applied physics, 1990-04, Vol.67 (7), p.3500-3510</ispartof><rights>1993 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c254t-d6689abdd4ed48cd6a0c56327519c7e99e88faad2844b9f5425c82a35ccb993d3</citedby><cites>FETCH-LOGICAL-c254t-d6689abdd4ed48cd6a0c56327519c7e99e88faad2844b9f5425c82a35ccb993d3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4425578$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ANDERSSON, G. I</creatorcontrib><creatorcontrib>ENGSTRÖM, O</creatorcontrib><title>A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions</title><title>Journal of applied physics</title><description>A measurement method has been developed which makes it possible to determine the thermal emission rates, the concentrations, and position of the thermal emission region for charge-carrier emission centers in nonabrupt p-n junctions. A computerized deep-level transient spectroscopy (DLTS) technique for current transients is used in combination with capacitance measurements. Numerical, iterative calculations of the shallow doping profile of the p-n junction and capacitance change connected with thermal emission of charge carriers from the emission centers are compared with measured data. Generalized expressions for the determination of carrier emission data from thermal current and capacitance transients are derived for nonabrupt p-n junctions. The method is applicable when the properties of the p-n junction cannot be chosen arbitrarily, for example, for the study of deep impurity centers in standard types of semiconductor devices where conventional DLTS methods fail.</description><subject>Charge carriers: generation, recombination, lifetime, and trapping</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Exact sciences and technology</subject><subject>Physics</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1990</creationdate><recordtype>article</recordtype><recordid>eNo9kE1LAzEQhoMoWKvgT8jBg5fUZJPsJsdS_IKCFz0v2dlZm9Jm1yQV6tkf7taKp4GZ531hHkKuBZ8JXso7MZNKSyVOyERwY1mlNT8lE84LwYyt7Dm5SGnNuRBG2gn5ntMWcWAb_MQNzdGF5DFkmgaEHPsE_bCnGWEV_McOaddHmldIYeWig4zRf7ns-0D77nf3jgxcjB4jxa1P6XCCsQ9joj7Q0AfXxN2Q6cACXe8CHMLpkpx1bpPw6m9OydvD_eviiS1fHp8X8yWDQqvM2rI01jVtq7BVBtrScdClLCotLFRoLRrTOdcWRqnGdloVGkzhpAZorJWtnJLbYy-Mn6WIXT1Ev3VxXwteH-zVoj7aG9GbIzq4BG7TjWLAp39ejd26MvIHHvVyEQ</recordid><startdate>19900401</startdate><enddate>19900401</enddate><creator>ANDERSSON, G. I</creator><creator>ENGSTRÖM, O</creator><general>American Institute of Physics</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>19900401</creationdate><title>A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions</title><author>ANDERSSON, G. I ; ENGSTRÖM, O</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c254t-d6689abdd4ed48cd6a0c56327519c7e99e88faad2844b9f5425c82a35ccb993d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1990</creationdate><topic>Charge carriers: generation, recombination, lifetime, and trapping</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Exact sciences and technology</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>ANDERSSON, G. I</creatorcontrib><creatorcontrib>ENGSTRÖM, O</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ANDERSSON, G. I</au><au>ENGSTRÖM, O</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions</atitle><jtitle>Journal of applied physics</jtitle><date>1990-04-01</date><risdate>1990</risdate><volume>67</volume><issue>7</issue><spage>3500</spage><epage>3510</epage><pages>3500-3510</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>A measurement method has been developed which makes it possible to determine the thermal emission rates, the concentrations, and position of the thermal emission region for charge-carrier emission centers in nonabrupt p-n junctions. A computerized deep-level transient spectroscopy (DLTS) technique for current transients is used in combination with capacitance measurements. Numerical, iterative calculations of the shallow doping profile of the p-n junction and capacitance change connected with thermal emission of charge carriers from the emission centers are compared with measured data. Generalized expressions for the determination of carrier emission data from thermal current and capacitance transients are derived for nonabrupt p-n junctions. The method is applicable when the properties of the p-n junction cannot be chosen arbitrarily, for example, for the study of deep impurity centers in standard types of semiconductor devices where conventional DLTS methods fail.</abstract><cop>Woodbury, NY</cop><pub>American Institute of Physics</pub><doi>10.1063/1.345341</doi><tpages>11</tpages></addata></record> |
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subjects | Charge carriers: generation, recombination, lifetime, and trapping Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Exact sciences and technology Physics |
title | A deep-level transient spectroscopy technique for the characterization of charge-carrier emission centers in nonabrupt p-n junctions |
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