Electrical and optical properties of SnEuTe and SnSrTe films
The SnTe, Sn 1 − x Eu x Te and Sn 1 − x Sr x Te ( x < 0.06 ) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1 × 10 19 cm − 3 with high mobility exceeding 2000 cm 2 / V s at room temperature. Optical transmission...
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| Veröffentlicht in: | Journal of applied physics 2010-06, Vol.107 (12), p.123708-123708-6 |
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| container_end_page | 123708-6 |
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| container_issue | 12 |
| container_start_page | 123708 |
| container_title | Journal of applied physics |
| container_volume | 107 |
| creator | Ishida, Akihiro Tsuchiya, Takuro Yamada, Tomohiro Cao, Daoshe Takaoka, Sadao Rahim, Mohamed Felder, Ferdinand Zogg, Hans |
| description | The SnTe,
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
(
x
<
0.06
)
films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around
1
×
10
19
cm
−
3
with high mobility exceeding
2000
cm
2
/
V
s
at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model. |
| doi_str_mv | 10.1063/1.3446819 |
| format | Article |
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Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
(
x
<
0.06
)
films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around
1
×
10
19
cm
−
3
with high mobility exceeding
2000
cm
2
/
V
s
at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/1.3446819</identifier><identifier>CODEN: JAPIAU</identifier><language>eng</language><publisher>American Institute of Physics</publisher><ispartof>Journal of applied physics, 2010-06, Vol.107 (12), p.123708-123708-6</ispartof><rights>2010 American Institute of Physics</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c429t-fbe01c0f738e076daf6fa58c91d965d7f3207acc6ae52e8d581cd5b69568bf943</citedby><cites>FETCH-LOGICAL-c429t-fbe01c0f738e076daf6fa58c91d965d7f3207acc6ae52e8d581cd5b69568bf943</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://pubs.aip.org/jap/article-lookup/doi/10.1063/1.3446819$$EHTML$$P50$$Gscitation$$H</linktohtml><link.rule.ids>314,780,784,794,1559,4511,27923,27924,76255,76261</link.rule.ids></links><search><creatorcontrib>Ishida, Akihiro</creatorcontrib><creatorcontrib>Tsuchiya, Takuro</creatorcontrib><creatorcontrib>Yamada, Tomohiro</creatorcontrib><creatorcontrib>Cao, Daoshe</creatorcontrib><creatorcontrib>Takaoka, Sadao</creatorcontrib><creatorcontrib>Rahim, Mohamed</creatorcontrib><creatorcontrib>Felder, Ferdinand</creatorcontrib><creatorcontrib>Zogg, Hans</creatorcontrib><title>Electrical and optical properties of SnEuTe and SnSrTe films</title><title>Journal of applied physics</title><description>The SnTe,
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
(
x
<
0.06
)
films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around
1
×
10
19
cm
−
3
with high mobility exceeding
2000
cm
2
/
V
s
at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.</description><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><recordid>eNp1z0tLxDAUhuEgCtbRhf-gWxcdz2maG4ggQ73AgIuO65CmCUQ6bUnqwn9vnRlw5ep8i5cDDyG3CGsETu9xTauKS1RnJEOQqhCMwTnJAEospBLqklyl9AmAKKnKyEPdOzvHYE2fm6HLx2k-7CmOk4tzcCkffd4M9dfOHYJmaOIyfej36ZpceNMnd3O6K_LxXO82r8X2_eVt87QtbFWqufCtA7TgBZUOBO-M594waRV2irNOeFqCMNZy41jpZMck2o61XDEuW68quiJ3x782jilF5_UUw97Eb42gf9ka9Ym9tI_HNtkwmzmMw__xn10vNH2w0x_s0180</recordid><startdate>20100615</startdate><enddate>20100615</enddate><creator>Ishida, Akihiro</creator><creator>Tsuchiya, Takuro</creator><creator>Yamada, Tomohiro</creator><creator>Cao, Daoshe</creator><creator>Takaoka, Sadao</creator><creator>Rahim, Mohamed</creator><creator>Felder, Ferdinand</creator><creator>Zogg, Hans</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20100615</creationdate><title>Electrical and optical properties of SnEuTe and SnSrTe films</title><author>Ishida, Akihiro ; Tsuchiya, Takuro ; Yamada, Tomohiro ; Cao, Daoshe ; Takaoka, Sadao ; Rahim, Mohamed ; Felder, Ferdinand ; Zogg, Hans</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c429t-fbe01c0f738e076daf6fa58c91d965d7f3207acc6ae52e8d581cd5b69568bf943</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ishida, Akihiro</creatorcontrib><creatorcontrib>Tsuchiya, Takuro</creatorcontrib><creatorcontrib>Yamada, Tomohiro</creatorcontrib><creatorcontrib>Cao, Daoshe</creatorcontrib><creatorcontrib>Takaoka, Sadao</creatorcontrib><creatorcontrib>Rahim, Mohamed</creatorcontrib><creatorcontrib>Felder, Ferdinand</creatorcontrib><creatorcontrib>Zogg, Hans</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ishida, Akihiro</au><au>Tsuchiya, Takuro</au><au>Yamada, Tomohiro</au><au>Cao, Daoshe</au><au>Takaoka, Sadao</au><au>Rahim, Mohamed</au><au>Felder, Ferdinand</au><au>Zogg, Hans</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and optical properties of SnEuTe and SnSrTe films</atitle><jtitle>Journal of applied physics</jtitle><date>2010-06-15</date><risdate>2010</risdate><volume>107</volume><issue>12</issue><spage>123708</spage><epage>123708-6</epage><pages>123708-123708-6</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>The SnTe,
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
(
x
<
0.06
)
films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around
1
×
10
19
cm
−
3
with high mobility exceeding
2000
cm
2
/
V
s
at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the
Sn
1
−
x
Eu
x
Te
and
Sn
1
−
x
Sr
x
Te
systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.3446819</doi><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 2010-06, Vol.107 (12), p.123708-123708-6 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_3446819 |
| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| title | Electrical and optical properties of SnEuTe and SnSrTe films |
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