Electrical and optical properties of SnEuTe and SnSrTe films

The SnTe, Sn 1 − x Eu x Te and Sn 1 − x Sr x Te ( x < 0.06 ) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1 × 10 19 cm − 3 with high mobility exceeding 2000 cm 2 / V s at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn 1 − x Eu x Te and Sn 1 − x Sr x Te systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.