Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs: Cr

Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC wi...

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Veröffentlicht in:	Journal of applied physics 1989-06, Vol.65 (12), p.4864-4868
Hauptverfasser:	PAPAIOANNOU, G. J, NOWAK, M, EUTHYMIOU, P. C
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic transport in condensed matter Exact sciences and technology Photoconduction and photovoltaic effects photodielectric effects Physics
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Zusammenfassung:	Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.343199