Electrically enhanced infrared photoluminescence in Cr:ZnSe
A sixfold enhancement of infrared (IR) photoluminescence (PL) from thick single crystal Cr:ZnSe under electrical excitation is reported. The baseline PL signal is obtained under a charge-transfer band optical seeding. The electrically enhanced IR signal is localized in the vicinity of the cathode an...
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| Veröffentlicht in: | Applied physics letters 2010-05, Vol.96 (21), p.211107-211107-3 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A sixfold enhancement of infrared (IR) photoluminescence (PL) from thick single crystal Cr:ZnSe under electrical excitation is reported. The baseline PL signal is obtained under a charge-transfer band optical seeding. The electrically enhanced IR signal is localized in the vicinity of the cathode and is shown to be likely related to hole concentration. The various mechanisms involved in this IR light emission will be discussed. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.3431663 |