Effects of deuterium plasmas on silicon near-surface properties

The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactiv...

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Veröffentlicht in:	Journal of applied physics 1989-04, Vol.65 (8), p.3297-3300
Hauptverfasser:	LINDSTRÖM, J. L, OEHRLEIN, G. S, SCILLA, G. J, YAPSIR, A. S, CORBETT, J. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Solid surfaces and solid-solid interfaces Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.342666