Hydrogenation kinetics in oxidized boron-doped silicon irradiated by keV electrons

Hydrogenation kinetics of boron acceptors in oxidized silicon during and after repeated 8-keV electron irradiation (225–2700-μC/cm2 stresses and 10–168-h interirradiation anneals) at room temperature are reported. Hydrogenation proceeds rapidly during irradiation but continues for many hours after the 8-keV electron beam is removed. Postoxidation process dependencies show that postoxidation and postmetallization annealing processes reduce the hydrogenation effect during the 8-keV electron irradiation, while exposure of the oxide to water prior to aluminum electrode deposition enhances it. The data can be interpreted by our two-reaction model consisting of the hydrogen capture reaction by the boron acceptor and the hydrogen recombination reaction to form hydrogen molecule.