A high-performance top-gate graphene field-effect transistor based frequency doubler
A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency double...
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| Veröffentlicht in: | Applied physics letters 2010-04, Vol.96 (17), p.173104-173104-3 |
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| Hauptverfasser: | , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency doubler is increased about ten times compared to that of the back-gate G-FET based device. The frequency response of the frequency doubler is also pushed from 10 kHz for a back-gate device to 200 kHz, at which most of the output power is concentrated at the doubled fundamental frequency of 400 kHz. |
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| ISSN: | 0003-6951 1077-3118 |
| DOI: | 10.1063/1.3413959 |