Reordering of polycrystalline Pd2Si on epitaxial Pd2Si

Polycrystalline Pd2Si is found to reorder on top of epitaxial Pd2Si during silicide growth. The interface between polycrystalline Pd2Si and epitaxial Pd2Si is, thus, not immobile with respect to the silicide lattice during silicide formation and it is, therefore, not possible to use this interface a...

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Veröffentlicht in:	Journal of applied physics 1988-04, Vol.63 (7), p.2402-2405
Hauptverfasser:	COMRIE, C. M, LIU, J. C, HUNG, L. S, MAYER, J. W
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Polycrystalline Pd2Si is found to reorder on top of epitaxial Pd2Si during silicide growth. The interface between polycrystalline Pd2Si and epitaxial Pd2Si is, thus, not immobile with respect to the silicide lattice during silicide formation and it is, therefore, not possible to use this interface as a structural marker in order to monitor diffusion in epitaxial Pd2Si. The use of Ti as an inert marker has shown that Si is the dominant diffusing species in epitaxial Pd2Si during silicide formation.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.341059