Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile

Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific type...

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Veröffentlicht in:	Journal of applied physics 1988-01, Vol.63 (2), p.578-580
Hauptverfasser:	OGALE, S. B, MADHUKAR, A, CHO, N. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
Online-Zugang:	Volltext
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