Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile

Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific type...

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Veröffentlicht in:	Journal of applied physics 1988-01, Vol.63 (2), p.578-580
Hauptverfasser:	OGALE, S. B, MADHUKAR, A, CHO, N. M
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Beschreibung
Zusammenfassung:	Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific types of gradations derived from consideration of typical experimental situations, and comparison is made with the available experimental data.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.340092