Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile
Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific type...
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| Veröffentlicht in: | Journal of applied physics 1988-01, Vol.63 (2), p.578-580 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
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| container_end_page | 580 |
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| container_issue | 2 |
| container_start_page | 578 |
| container_title | Journal of applied physics |
| container_volume | 63 |
| creator | OGALE, S. B MADHUKAR, A CHO, N. M |
| description | Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. Results are presented for two specific types of gradations derived from consideration of typical experimental situations, and comparison is made with the available experimental data. |
| doi_str_mv | 10.1063/1.340092 |
| format | Article |
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B</creatorcontrib><creatorcontrib>MADHUKAR, A</creatorcontrib><creatorcontrib>CHO, N. M</creatorcontrib><title>Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile</title><title>Journal of applied physics</title><description>Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. 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M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile</atitle><jtitle>Journal of applied physics</jtitle><date>1988-01-15</date><risdate>1988</risdate><volume>63</volume><issue>2</issue><spage>578</spage><epage>580</epage><pages>578-580</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Photoluminescence linewidth systematics for the case of semiconductor quantum well structures with a graded interface composition profile are studied within a model which attributes the linewidth to alloy disorder and alloy composition fluctuation effects. 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| fulltext | fulltext |
| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1988-01, Vol.63 (2), p.578-580 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_340092 |
| source | AIP Digital Archive |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics |
| title | Photoluminescence linewidth systematics for semiconductor quantum well structures with graded interface composition profile |
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