X-ray lithography with a Ag-Se/Ge-Se inorganic resist using synchrotron radiation

A Ag-Se/Ge-Se inorganic resist is applied in x-ray lithography using synchrotron radiation (SR). Usable sensitivity of 0.3–3 times that of a polymethylmethacrylate (PMMA) resist and high contrast (γ∼3.5) are obtained through SR exposures. By utilizing the fringes of masked SR flux caused by Fresnel diffraction, 500-Å-wide fine lines are formed by using x rays of 2–10 Å in wavelength. It is determined that a high-density resist, such as a Ag-Se/Ge-Se inorganic resist, is favorable for forming micropatterns using x rays because of the short ranges of the electrons generated by the x rays in the resist.