Models for heavy doping effects in gallium arsenide

Klauder’s self-energy method is used in a self-consistent calculation of the effects due to the interactions between carriers and dopant ions in GaAs at 300 K. The many-body effects due to the interactions among the carriers themselves, exchange, and correlation, are estimated by evaluating expressions similar to those of Abram et al. at 300 K. When densities exceed about 5×1016 cm−3 in n-type GaAs and 1018 cm−3 in p-type GaAs, carrier-dopant ion interactions and carrier-carrier interactions become significant and should be included in calculations of band structure changes and of properties which depend on the density of states such as carrier transport, effective intrinsic carrier concentrations, and coefficients for optical absorption.