Channeling analysis of mismatch strain in heteroepitaxial CdTe on Cd0.96Zn0.04Te(001)
Channeling is used to study how the lattice mismatch between CdTe layers grown by molecular-beam epitaxy on Cd0.96Zn0.04Te(001) is accommodated. Planar channeling allows us to determine the tetragonal distortion of the cubic lattice for layer thicknesses lower than the 300-nm critical thickness. Abo...
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| Veröffentlicht in: | Journal of applied physics 1987-11, Vol.62 (9), p.3718-3721 |
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| container_end_page | 3721 |
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| container_issue | 9 |
| container_start_page | 3718 |
| container_title | Journal of applied physics |
| container_volume | 62 |
| creator | CHAMI, A. C LIGEON, E FONTENILLE, J DANIELOU, R |
| description | Channeling is used to study how the lattice mismatch between CdTe layers grown by molecular-beam epitaxy on Cd0.96Zn0.04Te(001) is accommodated. Planar channeling allows us to determine the tetragonal distortion of the cubic lattice for layer thicknesses lower than the 300-nm critical thickness. Above 300 nm, planar channeling reveals misfit dislocations at the interface. A discussion of absolute strain measurement by channeling is presented. |
| doi_str_mv | 10.1063/1.339254 |
| format | Article |
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| identifier | ISSN: 0021-8979 |
| ispartof | Journal of applied physics, 1987-11, Vol.62 (9), p.3718-3721 |
| issn | 0021-8979 1089-7550 |
| language | eng |
| recordid | cdi_crossref_primary_10_1063_1_339254 |
| source | AIP Digital Archive |
| subjects | Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology |
| title | Channeling analysis of mismatch strain in heteroepitaxial CdTe on Cd0.96Zn0.04Te(001) |
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