Channeling analysis of mismatch strain in heteroepitaxial CdTe on Cd0.96Zn0.04Te(001)

Channeling is used to study how the lattice mismatch between CdTe layers grown by molecular-beam epitaxy on Cd0.96Zn0.04Te(001) is accommodated. Planar channeling allows us to determine the tetragonal distortion of the cubic lattice for layer thicknesses lower than the 300-nm critical thickness. Abo...

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Veröffentlicht in:	Journal of applied physics 1987-11, Vol.62 (9), p.3718-3721
Hauptverfasser:	CHAMI, A. C, LIGEON, E, FONTENILLE, J, DANIELOU, R
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: structure, mechanical and thermal properties Exact sciences and technology Physics Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology
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Beschreibung
Zusammenfassung:	Channeling is used to study how the lattice mismatch between CdTe layers grown by molecular-beam epitaxy on Cd0.96Zn0.04Te(001) is accommodated. Planar channeling allows us to determine the tetragonal distortion of the cubic lattice for layer thicknesses lower than the 300-nm critical thickness. Above 300 nm, planar channeling reveals misfit dislocations at the interface. A discussion of absolute strain measurement by channeling is presented.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.339254