Electron-paramagnetic-resonance study of heat-treatment centers in n-type silicon

Donor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ‘‘thermal-donor-’’ and ‘‘new-donor’’-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results allo...

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Veröffentlicht in:	Journal of applied physics 1987-12, Vol.62 (11), p.4404-4405
Hauptverfasser:	BEKMAN, H. H. P. T, GREGORKIEWICZ, T, VAN WEZEP, D. A, AMMERLAAN, C. A. J
Format:	Artikel
Sprache:	eng
Schlagworte:	Color centers and other defects Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron paramagnetic resonance and relaxation Exact sciences and technology Magnetic resonances and relaxations in condensed matter, mössbauer effect Physics
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Donor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ‘‘thermal-donor-’’ and ‘‘new-donor’’-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results allow one to identify the spectra in both regions as arising from the Si-NL10 defect.
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.339076