Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glass

Protective coating on the p-n junction of In0.53Ga0.47As/InP p-i-n planar diodes by vacuum-evaporated glass

A technique for protecting the p-n junction of InGaAs planar diodes using thermally evaporated glass films has been developed. A planar diode with a 90-μm-diam diffused junction protected with the glass film had a reverse current less than 1 nA at −20 V. The diode showed low reverse current even aft...

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Veröffentlicht in:Journal of applied physics 1987, Vol.61 (1), p.404-410
Hauptverfasser: OTA, Y, HU, P. H.-S, SEABURY, C. W, BROWN, M. G
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Zusammenfassung:A technique for protecting the p-n junction of InGaAs planar diodes using thermally evaporated glass films has been developed. A planar diode with a 90-μm-diam diffused junction protected with the glass film had a reverse current less than 1 nA at −20 V. The diode showed low reverse current even after prolonged high-temperature exposure (≳275 °C for 24 h) in air.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.338838